| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -200 V |
| Current Rating | -1.80 A |
| Case/Package | TO-220 |
| Power Rating | 20 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3 Ω |
| Polarity | P-Channel |
| Power Dissipation | 20 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | -200 V |
| Continuous Drain Current (Ids) | -1.80 A |
| Rise Time | 15.0 ns |
| Input Capacitance (Ciss) | 170pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.51 mm |
| Size-Width | 4.7 mm |
| Size-Height | 15.49 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Fast switching
● 150°C Operating temperature
● Easy to parallel
● Simple drive requirement
Vishay Semiconductor
9 Pages / 0.25 MByte
Vishay Semiconductor
9 Pages / 0.25 MByte
Vishay Semiconductor
3 Pages / 0.14 MByte
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