TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -200 V |
Current Rating | -1.80 A |
Case/Package | TO-220-3 |
Power Rating | 20 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 3 Ω |
Polarity | P-Channel |
Power Dissipation | 2 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | -200 V |
Continuous Drain Current (Ids) | -1.80 A |
Rise Time | 15.0 ns |
Input Capacitance (Ciss) | 170pF @25V(Vds) |
Input Power (Max) | 20 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 50 |
The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Fast switching
● 150°C Operating temperature
● Easy to parallel
● Simple drive requirement
VISHAY
9 Pages / 0.25 MByte
VISHAY
10 Pages / 0.19 MByte
VISHAY
3 Pages / 0.14 MByte
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