TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.8 Ω |
Polarity | P-Channel |
Power Dissipation | 3 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 200 V |
Continuous Drain Current (Ids) | -6.50 A |
Rise Time | 27 ns |
Input Capacitance (Ciss) | 700pF @25V(Vds) |
Fall Time | 24 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3W (Ta), 74W (Tc) |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 9.02 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 150℃ |
Minimum Packing Quantity | 2000 |
VISHAY
9 Pages / 0.16 MByte
VISHAY
9 Pages / 0.16 MByte
VISHAY
3 Pages / 0.06 MByte
International Rectifier
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package.
Vishay Siliconix
MOSFET P-CH 200V 6.5A TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 200V 6.5A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH...
Samsung
200V, P-channel power MOSFET
Fairchild
Trans MOSFET P-CH Si 200V 6.5A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-200V, Rds(on)=0.8Ω, Id=-6.5A)
VISHAY
TO-220-3P-CH 200V 6.5A 800mΩ
VISHAY
TO-252-3P-CH 200V 12A 300mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.