| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.8 Ω |
| Polarity | P-Channel |
| Power Dissipation | 74 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 6.50 A |
| Rise Time | 27 ns |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Operating Temperature | -55℃ ~ 150℃ |
The IRF9630STRLPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Ease of paralleling
● Surface-mount
● Halogen-free
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Vishay Semiconductor
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