TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -200 V |
Current Rating | -11.0 A |
Case/Package | TO-220-3 |
Power Rating | 125 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.5 Ω |
Polarity | P-Channel |
Power Dissipation | 125 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | -200 V |
Continuous Drain Current (Ids) | -11.0 A |
Rise Time | 43 ns |
Input Capacitance (Ciss) | 1200pF @25V(Vds) |
Input Power (Max) | 125 W |
Fall Time | 38 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 125 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 50 |
IRF9640 Series 200 V 0.5 Ohms Single P-Channel Power Mosfet - TO-220AB
VISHAY
7 Pages / 3.38 MByte
VISHAY
9 Pages / 0.26 MByte
VISHAY
2 Pages / 0.06 MByte
Vishay Semiconductor
Trans MOSFET P-CH 200V 11A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET P-CH 200V 11A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 200V 11A TO-220AB
International Rectifier
Trans Mosfet p-Ch 200V 11A 3Pin To-220
Intersil
Trans MOSFET P-CH 200V 11A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 200V 11A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 2...
Fairchild
11A, 200V, 0.5Ω, P-Channel Power MOSFETsE
Samsung
200V, P-channel power MOSFET
VISHAY
TO-220-3P-CH 200V 11A 500mΩ
VISHAY
TO-263-3P-CH 200V 11A 500mΩ
VISHAY
TO-252-3P-CH 200V 11A 500mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.