TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -200 V |
Current Rating | -11.0 A |
Case/Package | TO-220 |
Power Rating | 125 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.5 Ω |
Polarity | P-Channel |
Power Dissipation | 125 W |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | -200 V |
Continuous Drain Current (Ids) | -11.0 A |
Rise Time | 43 ns |
Input Capacitance (Ciss) | 1200pF @25V(Vds) |
Fall Time | 38 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 125 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.51 mm |
Size-Width | 4.7 mm |
Size-Height | 15.49 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRF9640PBF is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 175°C Operating temperature
● Easy to parallel
● Simple drive requirement
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