| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 3.5A |
| Rise Time | 8.8 ns |
| Input Capacitance (Ciss) | 190pF @15V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Dynamic dv/dt Rating
● Fast Switching
● Dual N-Channel MOSFET
Infineon
7 Pages / 0.16 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
11 Pages / 0.26 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte
International Rectifier
MOSFET 2N-CH 30V 3.5A 8-SOIC
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.1Ω)
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.1Ω; ID 3.5A; SO-8; PD 2W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 30V 3.5A 8Pin SOIC T/R
International Rectifier
MOSFET 2N-CH 30V 3.5A 8-SOIC
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