| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 500 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 3.7 W |
| Drain to Source Voltage (Vds) | -60.0 V |
| Continuous Drain Current (Ids) | -6.70 A |
| Rise Time | 63 ns |
| Input Capacitance (Ciss) | 270pF @25V(Vds) |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ |
| Minimum Packing Quantity | 2000 |
VISHAY
8 Pages / 0.15 MByte
Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
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VISHAY
TO-220-3P-CH 60V 6.7A 500mΩ
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ω; ID -6.7A; TO-220AB; PD 43W; VGS +/-20V
VISHAY
TO-252-3P-CH 60V 6.7A 500mΩ
Vishay Siliconix
MOSFET P-CH 60V 6.7A TO-220AB
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