TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 280 mΩ |
Polarity | P-Channel |
Power Dissipation | 40 W |
Drain to Source Voltage (Vds) | 50 V |
Continuous Drain Current (Ids) | -9.70 A |
Rise Time | 57 ns |
Input Capacitance (Ciss) | 480pF @25V(Vds) |
Input Power (Max) | 40 W |
Fall Time | 25 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 40 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.51 mm |
Size-Width | 4.65 mm |
Size-Height | 15.49 mm |
Operating Temperature | -55℃ ~ 150℃ |
Minimum Packing Quantity | 50 |
Single P-Channel 50 V 0.28 Ohms Flange Mount Power Mosfet - TO-220-3
VISHAY
8 Pages / 1.21 MByte
VISHAY
8 Pages / 0.25 MByte
International Rectifier
MOSFET P-CH 50V 9.7A TO-220AB
Vishay Siliconix
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
IRF
P-CHANNEL 50V POWER MOSFETs
VISHAY
TO-220-3P-CH 50V 9.7A 280mΩ
Vishay Semiconductor
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
Trans MOSFET P-CH 50V 9.7A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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