| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Power Rating | 60 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.28 Ω |
| Polarity | P-Channel |
| Power Dissipation | 60 W |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | -11.0 A |
| Operating Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• P-Channel
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Vishay Semiconductor
8 Pages / 1.76 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
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