| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 60000 mW |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 68 ns |
| Input Capacitance (Ciss) | 570pF @25V(Vds) |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
P-Channel 60V 11A (Tc) 60W (Tc) Through Hole TO-220AB
Vishay Siliconix
8 Pages / 0.36 MByte
Vishay Siliconix
8 Pages / 0.17 MByte
Vishay Siliconix
1 Pages / 0.13 MByte
International Rectifier
MOSFET P-CH 60V 11A TO-220AB
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Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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