| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.093 Ω |
| Polarity | P-Channel |
| Power Dissipation | 74 W |
| Drain to Source Voltage (Vds) | 50 V |
| Continuous Drain Current (Ids) | -18.0 A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 900pF @25V(Vds) |
| Input Power (Max) | 74 W |
| Fall Time | 64 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 74W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 50 |
The IRF9Z30PBF is a P-channel enhancement-mode Power MOSFET designed for application which require the convenience of reverse polarity operation. This device design achieve very low ON-state resistance combined with high trans-conductance and extreme device ruggedness. It is intended for use in power stages where complementary symmetry with n-channel devices offer circuit simplification. It is also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection.
● Fast switching
● Compact plastic package
● Low drive current
● Ease of paralleling
● Excellent temperature stability
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