| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Drain to Source Voltage (Vds) | 60 V |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• P-Channel
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Vishay Semiconductor
9 Pages / 0.26 MByte
Vishay Semiconductor
9 Pages / 0.26 MByte
VISHAY
TO-220-3P-CH 200V 11A 500mΩ
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ω; ID -14A; TO-220AB; PD 79W; VGS +/-20V
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