| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220-3 |
| Drain to Source Voltage (Vds) | 55 V |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●Advanced Process Technology
●Dynamic dv/dt Rating
●175°C Operating Temperature
●Fast Switching
●P-Channel
●Fully Avalanche Rated
International Rectifier
8 Pages / 0.1 MByte
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
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