| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -19.0 A |
| Case/Package | TO-262-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | P-Channel |
| Power Dissipation | 68 W |
| Part Family | IRF9Z34NL |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | -55.0 V |
| Continuous Drain Current (Ids) | -19.0 A |
| Rise Time | 55.0 ns |
| Input Capacitance (Ciss) | 620pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Height | 9.65 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
2 Pages / 0.06 MByte
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET P-CH 60V 18A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 18A TO-220AB
Infineon
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
