TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Power Rating | 68 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.1 Ω |
Polarity | P-CH |
Power Dissipation | 68 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 19A |
Rise Time | 55 ns |
Input Capacitance (Ciss) | 620pF @25V(Vds) |
Fall Time | 41 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF9Z34NSPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable device. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Advanced process technology
● Fast switching
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
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