| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.14 Ω |
| Polarity | P-Channel |
| Power Dissipation | 88 W |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | -18.0 A |
| Input Capacitance (Ciss) | 1100pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 88000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 15.49 mm |
| Operating Temperature | -55℃ ~ 175℃ |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• P-Channel
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Vishay Semiconductor
9 Pages / 0.26 MByte
Vishay Semiconductor
9 Pages / 0.26 MByte
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