TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-220-3 |
Power Dissipation | 170W (Tc) |
Drain to Source Voltage (Vds) | 500 V |
Input Capacitance (Ciss) | 1423pF @25V(Vds) |
Power Dissipation (Max) | 170W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 15.49 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 500V 11A (Tc) 170W (Tc) Through Hole TO-220AB
Vishay Siliconix
8 Pages / 0.13 MByte
Vishay Siliconix
3 Pages / 0.05 MByte
International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52Ω, ID = 11A
IRF
Power MOSFET(Vdss=500V, Rds(on)max=0.52Ω, Id=11A)
VISHAY
TO-220-3 N-CH 500V 11A 520mΩ
International Rectifier
SMPS MOSFET, N채널, Vd = 500V, Rds = 0.52Ω, Id = 11A, TO-220패키지
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ω; ID 11A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 500V 11A TO-220AB
Vishay Siliconix
MOSFET N-CH 500V 11A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220
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