| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 500 V |
| Current Rating | 11.0 A |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500V (min) |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 35.0 ns |
●Benefits
●Low Gate Charge Qg results in Simple Drive Requirement
●Improved Gate, Avalanche and dynamic dv/dt Ruggedness
●Fully Characterized Capacitance and Avalanche Voltage and Current
●Applications
●Switch Mode Power Supply ( SMPS )
●Uninterruptable Power Supply
●High speed power switching
International Rectifier
8 Pages / 0.09 MByte
International Rectifier
8 Pages / 0.09 MByte
International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52Ω, ID = 11A
IRF
Power MOSFET(Vdss=500V, Rds(on)max=0.52Ω, Id=11A)
VISHAY
TO-220-3 N-CH 500V 11A 520mΩ
International Rectifier
SMPS MOSFET, N채널, Vd = 500V, Rds = 0.52Ω, Id = 11A, TO-220패키지
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ω; ID 11A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 500V 11A TO-220AB
Vishay Siliconix
MOSFET N-CH 500V 11A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
