| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 11.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 170 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.52 Ω |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 1423pF @25V(Vds) |
| Input Power (Max) | 170 W |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 170 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
The IRFB11N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
VISHAY
8 Pages / 0.13 MByte
VISHAY
9 Pages / 0.18 MByte
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