TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 11.0 A |
Case/Package | TO-220 |
Power Rating | 170 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.52 Ω |
Polarity | N-Channel |
Power Dissipation | 170 W |
Threshold Voltage | 4 V |
Input Capacitance | 1423pF @25V |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 11.0 A |
Rise Time | 35.0 ns |
Input Capacitance (Ciss) | 1423pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 170 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRFB11N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Simple drive requirements
Vishay Semiconductor
8 Pages / 0.13 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
Vishay Semiconductor
3 Pages / 0.24 MByte
International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52Ω, ID = 11A
IRF
Power MOSFET(Vdss=500V, Rds(on)max=0.52Ω, Id=11A)
VISHAY
TO-220-3 N-CH 500V 11A 520mΩ
International Rectifier
SMPS MOSFET, N채널, Vd = 500V, Rds = 0.52Ω, Id = 11A, TO-220패키지
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ω; ID 11A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 500V 11A TO-220AB
Vishay Siliconix
MOSFET N-CH 500V 11A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-220
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