TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-220-3 |
Power Dissipation | 220000 mW |
Rise Time | 51 ns |
Input Capacitance (Ciss) | 2760pF @25V(Vds) |
Fall Time | 28 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 220W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 15.49 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 500V 16A (Tc) 220W (Tc) Through Hole TO-220AB
Vishay Siliconix
9 Pages / 0.27 MByte
Vishay Siliconix
9 Pages / 0.27 MByte
Vishay Siliconix
1 Pages / 0.13 MByte
VISHAY
TO-220-3 N-CH 500V 16A 320mΩ
Vishay Siliconix
MOSFET N-CH 500V 16A TO-220AB
VISHAY
Trans MOSFET N-CH 500V 16A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 500V 16A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 500V 16A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 500V 16A TO-220AB
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Intertechnology
Power Field-Effect Transistor, 16A I(D), 500V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Vishay Semiconductor
Trans MOSFET N-CH 500V 16A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=500V, Rds(on)typ.=0.28Ω, Id=16A)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.