| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 290 mΩ |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 17A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 2830pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 220000 mW |
| TYPE | DESCRIPTION |
|---|
| Minimum Packing Quantity | 50 |
VISHAY
10 Pages / 0.29 MByte
VISHAY
10 Pages / 0.16 MByte
VISHAY
TO-220-3 N-CH 500V 17A 290mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.26Ω; ID 17A; TO-220AB; PD 220W; VGS +/-30V
VISHAY
TO-220-3 N-CH 500V 17A 290mΩ
International Rectifier
MOSFET N-CH 500V 17A TO-220AB
Vishay Siliconix
Mosfet n-Ch 500V 17A To-220ab
Vishay Semiconductor
Trans MOSFET N-CH 500V 17A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 500V, 0.29Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Kersemi Electronic
Power MOSFET(Vdss=500V/ Rds(on)max=0.26Ω/ Id=27A)
Kersemi Electronic
Power MOSFET(Vdss=500V/ Rds(on)max=0.26Ω/ Id=27A)
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