TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 18.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.25 Ω |
Polarity | N-Channel |
Power Dissipation | 220 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 17.0 A |
Rise Time | 60 ns |
Input Capacitance (Ciss) | 2830pF @25V(Vds) |
Input Power (Max) | 220 W |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 220000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Minimum Packing Quantity | 50 |
The IRFB18N50KPBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Low RDS (ON)
VISHAY
9 Pages / 0.21 MByte
VISHAY
9 Pages / 0.21 MByte
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