| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 24.0 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.8 W |
| Part Family | IRFB23N20D |
| Input Capacitance | 1960pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 32.0 ns |
| Thermal Resistance | 0.9℃/W (RθJC) |
| Input Capacitance (Ciss) | 1960pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
12 Pages / 0.14 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.1Ω; ID 24A; TO-220AB; PD 170W; VGS +/-30V
International Rectifier
MOSFET N-CH 200V 24A TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.1Ω, Id=24A)
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