| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 56.0 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 380 W |
| Part Family | IRFB260N |
| Input Capacitance | 4220pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 56.0 A |
| Rise Time | 64.0 ns |
| Thermal Resistance | 0.4℃/W (RθJC) |
| Input Capacitance (Ciss) | 4220pF @25V(Vds) |
| Input Power (Max) | 380 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.54 mm |
| Size-Height | 15.24 mm |
| Operating Temperature | -55℃ ~ 175℃ |
SMPS MOSFET
●VDSS RDS(on) max ID
●200V 0.040Ω 56A
●Benefits
●Low Gate-to-Drain Charge to Reduce Switching Losses
●Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
●Fully Characterized Avalanche Voltage and Current
●High frequency DC-DC converters
●Applications
●Lead-Free
International Rectifier
9 Pages / 0.16 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
Power MOSFET(Vdss=200V/ Rds(on)max=0.04Ω/ Id=56A)
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.04Ω, Id=56A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 56A; TO-220AB; PD 380W; VGS +/-20V
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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