| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.082 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 2370 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 31A |
| Rise Time | 38 ns |
| Thermal Resistance | 0.75℃/W (RθJC) |
| Input Capacitance (Ciss) | 2370pF @25V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1W (Ta), 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 19.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB31N20DPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Low gate to drain charge to reduce switching loss
● Fully characterized capacitance and avalanche SOA
● Surface mount
Infineon
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IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.082Ω, Id=31A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ω; ID 31A; TO-220AB; PD 200W; VGS +/-30V
International Rectifier
Trans MOSFET N-CH 200V 31A 3Pin(3+Tab) TO-220AB
IFC
N-Channel 200V 0.082Ω 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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