TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0045 Ω |
Polarity | N-Channel |
Power Dissipation | 370 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 180A |
Rise Time | 67 ns |
Input Capacitance (Ciss) | 9620pF @50V(Vds) |
Input Power (Max) | 370 W |
Fall Time | 88 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 370W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Rail, Tube |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
Infineon
8 Pages / 0.29 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.09 MByte
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagem
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W
International Rectifier
Trans MOSFET N-CH 100V 180A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
100V Single N-Channel Q101 Qualified HEXFET Power MOSFET in a TO-220AB package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.