| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 190 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0197 Ω |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 4600 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 65A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 4600pF @25V(Vds) |
| Input Power (Max) | 330 W |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 330W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
● 175°C Operating temperature
● Low QG for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
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International Rectifier
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 19.7 Milliohms; ID 65A; TO-220AB; PD 330W
IFA
N-Channel 200V 24mΩ 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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