| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 144 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | N-Channel |
| Power Dissipation | 144 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 1710 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 25A |
| Rise Time | 22.4 ns |
| Input Capacitance (Ciss) | 1710pF @50V(Vds) |
| Fall Time | 14.8 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 144W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB4620PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
7 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
Trans MOSFET N-CH 200V 25A 3Pin(3+Tab) TO-220AB Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
