| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 320 W |
| Part Family | IRFB52N15D |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 60.0 A |
| Rise Time | 47 ns |
| Fall Time | 25 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 175℃ |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
12 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)max=0.032Ω/ Id=50A)
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.032Ω, Id=50A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 32Milliohms; ID 51A; TO-220AB; PD 230W; -55deg
International Rectifier
MOSFET N-CH 150V 51A TO-220AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
