| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 320 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.032 Ω |
| Polarity | N-Channel |
| Power Dissipation | 320 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2770 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 51A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 2770pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB52N15DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
● Fully characterized avalanche voltage and current
● Low gate-to-drain charge to reduce switching losses
Infineon
11 Pages / 0.31 MByte
Infineon
270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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2 Pages / 0.04 MByte
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1 Pages / 0.14 MByte
International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)max=0.032Ω/ Id=50A)
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.032Ω, Id=50A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 32Milliohms; ID 51A; TO-220AB; PD 230W; -55deg
International Rectifier
MOSFET N-CH 150V 51A TO-220AB
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