| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 144 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.032 Ω |
| Polarity | N-Channel |
| Power Dissipation | 144 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 150A |
| Rise Time | 23.1 ns |
| Input Capacitance (Ciss) | 1750pF @50V(Vds) |
| Input Power (Max) | 144 W |
| Fall Time | 13.2 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 144W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB5615PBF is a 150V single N-channel Digital Audio HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. It is specially designed for class D audio amplifier applications. Gate charge, body diode reverse recovery and internal gate resistance are optimized to improve audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. It features combine to make this MOSFET a highly efficient, robust and reliable device for class-D audio amplifier applications.
● Key parameters optimized for class-D audio
● Amplifier applications
● Low RDS (ON) for improved efficiency
● Low QG and QSW for better THD and improved efficiency
● Low QRR for better THD and lower EMI
● Can deliver up to 300W per channel into 4R load in half-bridge configuration amplifier
● 175°C Operating junction temperature for ruggedness
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