| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 375 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.00165 Ω |
| Polarity | N-Channel |
| Power Dissipation | 375 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 295A |
| Input Capacitance (Ciss) | 13703pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB7530PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, O-ring and redundant power switches, half-bridge and full-bridge topologies.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
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