| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 99 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.006 Ω |
| Polarity | N-Channel |
| Power Dissipation | 99 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 75A |
| Rise Time | 51 ns |
| Input Capacitance (Ciss) | 3000pF @25V(Vds) |
| Fall Time | 34 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 99W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB7546PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
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60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package
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