TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-220-3 |
Power Dissipation | 170W (Tc) |
Drain to Source Voltage (Vds) | 600 V |
Input Capacitance (Ciss) | 1400pF @25V(Vds) |
Power Dissipation (Max) | 170W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
Vishay Siliconix
8 Pages / 0.36 MByte
Vishay Siliconix
9 Pages / 0.29 MByte
IRF
Power MOSFET(Vdss=600V, Rds(on)=0.75Ω, Id=9.2A)
VISHAY
TO-220-3 N-CH 600V 9.2A 750mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ω; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
VISHAY
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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