| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 9.20 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600V (min) |
| Continuous Drain Current (Ids) | 9.20 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 1400pF @25V(Vds) |
| Input Power (Max) | 170 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 170000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
VISHAY
8 Pages / 0.13 MByte
IRF
Power MOSFET(Vdss=600V, Rds(on)=0.75Ω, Id=9.2A)
VISHAY
TO-220-3 N-CH 600V 9.2A 750mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ω; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
VISHAY
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
