IRFB9N60APBF Datasheet PDF - VISHAY

Manufacturer:	VISHAY
Category:	MOSFETs
Case Package:	TO-220-3
Description:	TO-220-3 N-CH 600V 9.2A 750mΩ
Documentation:	IRFB9N60APBF Datasheet (9 Pages)Package Outline Dimension on8 Page Part Numbering System on1 Page IRFB9N60APBF Application Note (8 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IRFB9N60APBF Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	600 V
Current Rating	9.20 A
Case/Package	TO-220-3
Power Rating	170 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.75 Ω
Polarity	N-Channel
Power Dissipation	170 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	9.20 A
Rise Time	25 ns
Input Capacitance (Ciss)	1400pF @25V(Vds)
Input Power (Max)	170 W
Fall Time	22 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	170 W

VISHAY

9 Pages / 0.29 MByte

VISHAY

33 Pages / 0.53 MByte

VISHAY

8 Pages / 0.17 MByte

IRF

Power MOSFET(Vdss=600V, Rds(on)=0.75Ω, Id=9.2A)

Vishay Semiconductor

VISHAY

TO-220-3 N-CH 600V 9.2A 750mΩ

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ω; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V

Vishay Siliconix