| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 0.93 Ω |
| Polarity | N-Channel |
| Power Dissipation | 167 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 8.50 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 1417pF @25V(Vds) |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 167 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Vishay Semiconductor
8 Pages / 0.12 MByte
Vishay Semiconductor
9 Pages / 0.28 MByte
IRF
Power MOSFET(Vdss=650V, Rds(on)max=0.93Ω, Id=8.5A)
VISHAY
Trans MOSFET N-CH 650V 8.5A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
VISHAY IRFB9N65APBF Power MOSFET, N Channel, 8.5A, 650V, 930mohm, 10V, 4V
International Rectifier
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Siliconix
MOSFET N-CH 650V 8.5A TO-220AB
Vishay Siliconix
MOSFET N-CH 650V 8.5A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 650V 8.5A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Infineon
Infineon Technologies IRFB9N65APBF, MOSFET N channel 8.5A 650V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
