| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 650 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.023 Ω |
| Polarity | N-CH |
| Power Dissipation | 650 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 98A |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 6080pF @25V(Vds) |
| Fall Time | 77 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 650W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 11 mm |
| Size-Width | 5 mm |
| Size-Height | 16.5 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
9 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Single N-Channel 200V 650W 160NC Hexfet Power Mosfet Through Hole - SBM-2
International Rectifier
MOSFET N-CH 200V 98A SUPER-220
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