| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 2.2 Ω |
| Power Dissipation | 74000 mW |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 660pF @25V(Vds) |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 74W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB
Vishay Siliconix
9 Pages / 1.83 MByte
Vishay Siliconix
9 Pages / 1.83 MByte
Vishay Siliconix
1 Pages / 0.13 MByte
ST Microelectronics
N - CHANNEL 600V - 1.8Ω - 3.6A - TO-220 PowerMESH]II MOSFET
VISHAY
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 3.6A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 600V 3.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-220-3 N-CH 600V 3.6A 2.2Ω
VISHAY
TO-252-3 N-CH 600V 3.6A 2.2Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 2.2Ω; ID 3.6A; TO-220AB; PD 74W; VGS +/-20V
International Rectifier
MOSFET N-CH 600V 3.6A TO-220AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
