| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 6.20 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 6.20 A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 1036pF @25V(Vds) |
| Input Power (Max) | 125 W |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFBC40APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
● Low gate charge Qg results in simple drive requirement
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Effective COSS specified
VISHAY
9 Pages / 0.28 MByte
VISHAY
9 Pages / 0.27 MByte
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