| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | D2PAK-263 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3100 mW |
| TYPE | DESCRIPTION |
|---|
| Operating Temperature | -55℃ ~ 150℃ |
The IRFBC40SPBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. This surface-mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Halogen-free
● Dynamic dV/dt rating
● 150°C Operating temperature
● Fast switching
● Fully avalanche rated
VISHAY
8 Pages / 0.99 MByte
VISHAY
11 Pages / 0.31 MByte
VISHAY
3 Pages / 0.06 MByte
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