TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 800 V |
Current Rating | 4.10 A |
Case/Package | TO-220-3 |
Power Rating | 125 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 3 Ω |
Polarity | N-Channel |
Power Dissipation | 125 W |
Threshold Voltage | 4 V |
Input Capacitance | 1300pF @25V |
Drain to Source Voltage (Vds) | 800 V |
Breakdown Voltage (Drain to Source) | 800 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 4.10 A |
Rise Time | 33 ns |
Input Capacitance (Ciss) | 1300pF @25V(Vds) |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 125 W |
TYPE | DESCRIPTION |
---|
Packaging | Bulk |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 150°C Operating temperature
● Easy to parallel
● Simple drive requirement
Vishay Semiconductor
9 Pages / 1.55 MByte
Vishay Semiconductor
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