| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 800 V |
| Current Rating | 4.10 A |
| Case/Package | TO-262 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 4.10 A |
| Rise Time | 33.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
Description
●Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●O Dynamic dv/dt Rating
●O Repetitive Avalanche Rated
●O Fast Switching
●O Ease of Paralleling
●O Simple Drive Requirements
International Rectifier
6 Pages / 0.45 MByte
International Rectifier
6 Pages / 0.46 MByte
International Rectifier
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