TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Polarity | N-Channel |
Power Dissipation | 125 W |
Drain to Source Voltage (Vds) | 800 V |
Continuous Drain Current (Ids) | 4.10 A |
Rise Time | 33 ns |
Input Capacitance (Ciss) | 1300pF @25V(Vds) |
Input Power (Max) | 125 W |
Fall Time | 30 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ |
Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - D2PAK-3
VISHAY
11 Pages / 0.6 MByte
VISHAY
11 Pages / 0.49 MByte
International Rectifier
MOSFET N-CH 800V 4.1A TO-220AB
Vishay Siliconix
MOSFET N-CH 800V 4.1A TO-220AB
Vishay Semiconductor
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IRF
Power MOSFET(Vdss=800V, Rds(on)=3Ω, Id=4.1A)
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(2+Tab) D2PAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3Ω; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
International Rectifier
Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-262
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