| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | D2PAK-263 |
| Drain to Source Resistance (on) (Rds) | 3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 4.10 A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Vishay Semiconductor
8 Pages / 1.16 MByte
Vishay Semiconductor
11 Pages / 0.49 MByte
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