| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Rise Time | 33 ns |
| Fall Time | 30 ns |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Vishay Semiconductor
8 Pages / 1.16 MByte
Vishay Semiconductor
11 Pages / 0.49 MByte
International Rectifier
MOSFET N-CH 800V 4.1A TO-220AB
Vishay Siliconix
MOSFET N-CH 800V 4.1A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=800V, Rds(on)=3Ω, Id=4.1A)
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(2+Tab) D2PAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3Ω; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
International Rectifier
Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-262
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