| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 1.40 A |
| Case/Package | TO-220 |
| Power Rating | 54 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 11.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 500pF @25V |
| Drain to Source Voltage (Vds) | 1 kV |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Continuous Drain Current (Ids) | 1.40 A |
| Rise Time | 17.0 ns |
| Input Capacitance (Ciss) | 500pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 54 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The package is universally preferred at power dissipation levels to approximately 50W. The low thermal contribute to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements
Vishay Semiconductor
9 Pages / 1.21 MByte
Vishay Semiconductor
9 Pages / 0.49 MByte
Vishay Semiconductor
3 Pages / 0.24 MByte
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