IRFBG30 Datasheet PDF - Vishay Siliconix

Manufacturer:	Vishay Siliconix
Category:	MOSFETs
Case Package:	TO-220-3
Description:	Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
Documentation:	IRFBG30 Datasheet (8 Pages)Part Numbering System on1 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IRFBG30 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	1.00 kV
Current Rating	3.10 A
Case/Package	TO-220-3
Drain to Source Resistance (on) (Rds)	5.00 Ω
Polarity	N-Channel
Power Dissipation	125W (Tc)
Drain to Source Voltage (Vds)	1000 V
Breakdown Voltage (Drain to Source)	1.00kV (min)
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	3.10 A
Rise Time	25.0 ns
Input Capacitance (Ciss)	980pF @25V(Vds)
Power Dissipation (Max)	125W (Tc)